N-Channel MOSFET, 60V, 3Ω, TO-39, Enhancement Mode
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The 2N6660 is an N-Channel enhancement mode MOSFET manufactured by Siliconix (SSI). This transistor is designed for switching and amplification applications requiring a voltage rating of up to 60V. It exhibits a drain-source on-state resistance of 3Ω and is packaged in a TO-39 through-hole format.
This N-Channel MOSFET is suitable for various electronic circuits where efficient switching and amplification are needed. Its voltage and current handling capabilities make it applicable in diverse environments.