2N6520BU – FSC
Bipolar (BJT) Transistor PNP 350 V 500 mA 200MHz 625 mW Through Hole TO-92-3
Stock Quantity: 133
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.12 |
| 10+ | |
| 50+ | |
| 100+ |
133 in stock
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
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Overview
The onsemi 2N6520BU is a high-voltage PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications where robustness is paramount. Its 350V collector-emitter breakdown voltage (Vce) and 500mA continuous collector current (Ic) capability make it suitable for driving loads in moderate power circuits. A critical design consideration when utilizing this device is managing its 625mW power dissipation; exceeding this limit, especially in thermally constrained environments, can lead to premature device failure due to junction overheating, necessitating careful thermal design and heatsinking strategies.
Key Features
- 350V Collector-Emitter Breakdown Voltage (Vce)
- 500mA Continuous Collector Current (Ic)
- 625mW Maximum Power Dissipation
- 200MHz Transition Frequency (fT)
- TO-92-3 (TO-226AA) Through-Hole Package
- Minimum DC Current Gain (hFE) of 20 @ 50mA, 10V
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- High-voltage power supply regulation stages
- General-purpose switching in AC-coupled circuits
- Audio amplifier output stages requiring voltage swing
- Low-frequency signal isolation and level shifting
