2N6107G – ONSEMI
Part Number:
2N6107G
Manufacturer:
Date Code:
unk
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
BJT, PNP, 70V, 7A, 10MHz, 40W, TO-220, Through Hole Bipolar Transistor
Datasheet:
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Stock Quantity: 9
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.85 |
| 10+ | |
| 50+ | |
| 100+ |
9 in stock
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Product Details:
Overview
The 2N6107G is a PNP bipolar junction transistor (BJT) manufactured by ONSEMI. This through-hole component is packaged in a TO-220 form factor and is designed for amplification and switching applications. It features a collector-emitter voltage rating of 70V and a continuous collector current of 7A, with a power dissipation of 40W. The 2N6107G provides a gain bandwidth product of 10MHz.
Key Features
- PNP Bipolar Transistor
- 70V Collector-Emitter Voltage
- 7A Continuous Collector Current
- 40W Power Dissipation
Applications
This PNP transistor is commonly used in various electronic circuits requiring amplification or switching. Its voltage and current ratings make it suitable for medium-power applications in diverse environments.
- Linear Amplifiers
- Switching Regulators
- Motor Control Circuits
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