2N4401 – MOTOROLA
BJT Transistor, NPN, 40V, 600mA, 250MHz, 625mW, TO-92, Through Hole
Stock Quantity: 297
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 1.55 |
| 10+ | |
| 50+ | |
| 100+ |
297 in stock
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Overview
The Diotec Semiconductor 2N4401 is a general-purpose NPN bipolar junction transistor (BJT) designed for switching and amplification applications, offering a robust 40V collector-emitter breakdown voltage and a 600mA continuous collector current capability. While its 250MHz transition frequency makes it suitable for moderate frequency circuits, a key design consideration for engineers is managing its 625mW power dissipation limit, especially in high-gain configurations where junction temperature rise can significantly impact long-term reliability and performance consistency. This component, often found in TO-92 packaging, represents a foundational building block for numerous analog and digital control circuits.
Key Features
- Collector-Emitter Breakdown Voltage (Vceo): 40 V
- Continuous Collector Current (Ic): 600 mA
- Maximum Power Dissipation: 625 mW
- Transition Frequency (fT): 250 MHz
- DC Current Gain (hFE) Min: 100 @ 150mA, 1V
- Package: TO-92 (TO-226-3, TO-92-3)
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-power audio amplification stages
- General-purpose signal switching in control logic
- Voltage regulation circuits with moderate current demands
- Driver stages for small relays and LEDs
