2N2222A – CENTRAL SEMI

Part Number:

2N2222A

Manufacturer:

CENTRAL SEMI

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

NPN BJT Transistor, 75 V, 800 mA, 500 mW, Through Hole

Datasheet:

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Product Details:

Overview

The 2N2222A is a general-purpose NPN bipolar junction transistor (BJT) manufactured by CENTRAL SEMI. This through-hole component is designed for amplification and switching applications, offering a collector-emitter voltage (Vceo) of 75V and a collector current (Ic) rating of 800mA. The device has a power dissipation of 500mW.

Key Features

NPN Transistor Polarity
75V Collector-Emitter Voltage
800mA Continuous Collector Current
500mW Power Dissipation

Applications

This transistor is commonly used in a variety of electronic circuits for signal amplification and as a switching element. Its characteristics make it suitable for use in diverse environments and designs.

Low-power Amplifiers
Switching Circuits
Signal Processing