2MBI50N-060 – FUJI ELECTRIC

Part Number:

2MBI50N-060

Manufacturer:

FUJI ELECTRIC

Date Code:

09+

RoHS:

RoHS Unknown

MSL:

COO:

Description:

N-Channel IGBT, 50 A I(C), 600 V V(BR)CES

Datasheet:

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Product Details:

Overview

The 2MBI50N-060 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by FUJI ELECTRIC. This component is designed for switching applications requiring a collector current (I(C)) of up to 50 Amperes and a collector-emitter breakdown voltage (V(BR)CES) of 600 Volts. It is typically supplied as a discrete device.

Key Features

N-Channel Configuration
50 A Collector Current (I(C))
600 V Collector-Emitter Voltage (V(BR)CES)

Applications

This IGBT is commonly employed in power electronics circuits where efficient and rapid switching is needed. Its voltage and current ratings make it suitable for a range of industrial and commercial uses.

Inverter Circuits
Power Supplies
Motor Control