1N4153 – EIC SEMICONDUCTOR

The 1N4153, manufactured by EIC, is a silicon epitaxial planar general-purpose diode encapsulated in a hermetically sealed DO-35 package. This diode features a maximum repetitive peak reverse voltage (VRRM) of 75V and a continuous forward current (IF) rating of 200mA. Its low forward voltage drop (VF), typically 0.72V at IF=10mA, makes it suitable for low-voltage applications. The 1N4153 exhibits a reverse recovery time (trr) of approximately 4 ns, enabling its use in high-speed switching circuits. The maximum reverse leakage current (IR) is 25 nA at VR=75V and 25°C, indicating minimal current leakage in the reverse bias condition. The operating and storage junction temperature range is -65°C to +175°C.