ISP20EP10LMXTSA1 – INFINEON

Part Number:

ISP20EP10LMXTSA1

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

P-Channel MOSFET, 100V, 650mA, 1.8W, PG-SOT223-4, Surface Mount

Datasheet:

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Product Details:

Overview

The ISP20EP10LMXTSA1 is a P-Channel enhancement mode MOSFET manufactured by Infineon. This transistor is designed for switching and amplification applications requiring a voltage rating of 100V and a continuous drain current of 650mA. It offers a power dissipation of 1.8W and is provided in a PG-SOT223-4 surface mount package, suitable for automated assembly processes.

Key Features

P-Channel Enhancement Mode
Voltage Rating: 100V
Continuous Drain Current: 650mA
Power Dissipation: 1.8W

Applications

This P-Channel MOSFET is suitable for a variety of power management and control circuits. Its characteristics make it appropriate for use in systems needing efficient load switching and voltage regulation.

High-Side Load Switching
DC-DC Conversion
Power Management in Portable Devices