BSZ180P03NS3 G – INFINEON

Part Number:

BSZ180P03NS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

30 V, 39.6 A P‑Channel MOSFET, 13.5 mOhm, S3O8 Package

Datasheet:

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Product Details:

Overview

The BSZ180P03NS3 G is a P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This component is designed for load switching and power management applications. It features a drain-source voltage rating of 30V and a continuous drain current of 39.6A. The BSZ180P03NS3 G offers a typical on-state resistance of 13.5 mOhm and is available in an S3O8 package for surface mount assembly.

Key Features

P-Channel enhancement mode
VDS: 30V
ID: 39.6A
RDS(on): 13.5 mOhm (typical)

Applications

This P-Channel MOSFET is suitable for a variety of power control and switching tasks. Its low on-resistance enables efficient operation in demanding circuits.

DC-DC converters
Load switching
Power management circuits