BSZ215C H – INFINEON
Part Number:
BSZ215C H
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
COO:
Description:
N/P‑Channel MOSFET, 20/‑20 V, 5.1/‑3.2 A
Datasheet:
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Product Details:
Overview
The BSZ215C H is an N/P-Channel enhancement mode MOSFET manufactured by Infineon. This device features both an N-channel and P-channel MOSFET integrated into a single package. It is designed for low voltage switching applications requiring complementary devices. The BSZ215C H has a voltage rating of 20V for the N-channel and -20V for the P-channel, with corresponding current ratings of 5.1A and -3.2A.
Key Features
- N/P-Channel configuration
- Enhancement mode operation
- 20V N-Channel drain-source voltage
- -20V P-Channel drain-source voltage
- 5.1A N-Channel continuous drain current
Applications
This complementary MOSFET is suitable for a variety of power management and switching circuits. Its dual-channel configuration allows for efficient control in applications requiring both high-side and low-side switching. It is commonly used in portable devices and battery-powered systems.
- DC-DC converters
- Load switching
- Power management circuits
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