BSR802N L6327 – INFINEON
Part Number:
BSR802N L6327
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
MALAYSIA
Description:
N-Channel MOSFET, 3.7 A, 20 V, SC-59 (SOT-23) Package
Datasheet:
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Product Details:
Overview
The BSR802N L6327 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching and amplification applications requiring efficient power management. It features a drain-source voltage of 20V and a continuous drain current of 3.7A. The BSR802N L6327 is supplied in a compact SC-59 (SOT-23) surface-mount package, making it suitable for high-density circuit board layouts.
Key Features
- N-Channel MOSFET technology
- 20V Drain-Source Voltage (Vds)
- 3.7A Continuous Drain Current (Id)
- Low On-Resistance (Rds(on))
- SC-59 (SOT-23) Package
Applications
This MOSFET is commonly used in various electronic circuits where efficient switching and power control are needed. Its small size and electrical characteristics make it suitable for portable devices and space-constrained applications.
- DC-DC converters
- Load switching
- Power management circuits
- Battery-powered devices
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