IRLHS6342TRPBF – INFINEON

Part Number:

IRLHS6342TRPBF

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

UNITED KINGDOM

Description:

N‑Channel HEXFET® Power MOSFET, 30 V, 19.5 mOhm, 11 nC, PQFN 2 mm x 2 mm, 30 V, 8.5 A

Datasheet:

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Product Details:

Overview

The IRLHS6342TRPBF is an N-Channel HEXFET® Power MOSFET manufactured by Infineon. This MOSFET features a drain-source voltage of 30V and a typical on-state resistance of 19.5 mOhm. It is supplied in a compact PQFN 2 mm x 2 mm package and is designed for efficient power switching applications with a continuous drain current rating of 8.5A.

Key Features

N-Channel configuration
30V Drain-Source Voltage (Vds)
19.5 mOhm On-Resistance (Rds(on))
8.5A Continuous Drain Current (Id)
PQFN 2 mm x 2 mm package

Applications

This MOSFET is suitable for various power management and switching circuits where space and efficiency are critical. Its low on-resistance minimizes power losses, making it ideal for battery-powered devices and high-frequency converters.

DC-DC converters
Load switching
Battery management systems
Power supplies