N‑Channel HEXFET® Power MOSFET, 20 V, 11.7 mOhm, 14 nC, PQFN 2 mm x 2 mm, 20 V, 8.5 A
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The IRLHS6242TRPBF is an N-Channel HEXFET® Power MOSFET manufactured by Infineon. This MOSFET is designed for power switching applications requiring efficient operation at low voltages. It features a drain-source voltage of 20V, a typical on-state resistance of 11.7 mOhm, and a gate charge of 14 nC. The component is packaged in a compact PQFN 2 mm x 2 mm footprint.
This power MOSFET is commonly utilized in various electronic systems where efficient power control is needed. Its low on-state resistance makes it suitable for applications demanding minimal power loss during switching.