IRFL014NTRPBF – INFINEON

Part Number:

IRFL014NTRPBF

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N‑Channel Power MOSFET, 55 V, 0.16 Ohm, 1.9 A, SOT‑223, 2.1 W, VGS ±20 V

Datasheet:

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Product Details:

Overview

The IRFL014NTRPBF is an N-Channel Power MOSFET manufactured by Infineon. This component is designed for power switching applications, offering a drain-source voltage (Vds) of 55V and a continuous drain current (Id) of 1.9A. It features a low on-state resistance (Rds(on)) of 0.16 Ohm. The IRFL014NTRPBF is supplied in a SOT-223 package and has a power dissipation of 2.1W with a gate-source voltage (Vgs) rating of ±20V.

Key Features

N-Channel MOSFET configuration
55V Drain-Source Voltage (Vds)
1.9A Continuous Drain Current (Id)
0.16 Ohm On-State Resistance (Rds(on))
SOT-223 Package

Applications

This Power MOSFET is commonly used in various power management and switching circuits. Its characteristics make it suitable for deployment in low-voltage, high-frequency applications where efficiency is a key consideration.

DC-DC Converters
Power Management Circuits
Load Switching