BSZ130N03MS G – INFINEON

Part Number:

BSZ130N03MS G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N‑Channel MOSFET, 30 V, 35 A, 13 mOhm, S3O8 Package

Datasheet:

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Product Details:

Overview

The BSZ130N03MS G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for power switching applications requiring efficient performance. It features a drain-source voltage rating of 30V and a continuous drain current of 35A. The component exhibits a typical on-state resistance of 13 mOhm. It is supplied in a S3O8 surface-mount package.

Key Features

N-Channel Enhancement Mode
30V Drain-Source Voltage (Vds)
35A Continuous Drain Current (Id)
13 mOhm On-State Resistance (Rds(on))
S3O8 Package

Applications

This MOSFET is suitable for use in various power management and switching circuits. Its low on-resistance contributes to reduced power losses and improved efficiency in target applications.

DC-DC Conversion
Load Switching
Motor Control