BSZ110N06NS3 G – INFINEON

Part Number:

BSZ110N06NS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N‑Channel MOSFET, 60 V, 20 A, 11 mOhm, S3O8 Package

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The BSZ110N06NS3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring efficient power management. It features a drain-source voltage rating of 60V and a continuous drain current of 20A. The device exhibits a low on-state resistance (Rds(on)) of 11 mOhm and is supplied in an S3O8 package.

Key Features

N-Channel Enhancement Mode
Vds: 60V
Ids: 20A
Rds(on): 11 mOhm (typical)

Applications

This MOSFET is commonly used in a variety of power switching and control circuits. Its characteristics make it suitable for implementation in systems requiring efficient energy conversion and management.

DC-DC Converters
Motor Control
Load Switching