BSZ160N10NS3 G – INFINEON

Part Number:

BSZ160N10NS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N‑Channel MOSFET, 100 V, 40 A, 16 mOhm, S3O8 Package

Datasheet:

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Product Details:

Overview

The BSZ160N10NS3 G is an N-Channel MOSFET manufactured by Infineon Technologies. This MOSFET is designed for switching and amplification applications requiring efficient power control. It features a drain-source voltage rating of 100V and a continuous drain current of 40A. The component is housed in an S3O8 package, facilitating surface mount assembly.

Key Features

N-Channel Enhancement Mode
VDS: 100V
ID: 40A
RDS(on): 16 mOhm (typical)

Applications

This N-Channel MOSFET is commonly utilized in various power management circuits and electronic systems. Its characteristics make it suitable for use in environments demanding efficient switching and low on-state resistance.

DC-DC Converters
Motor Control
Power Supplies