BSZ100N06LS3 G – INFINEON

Part Number:

BSZ100N06LS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N‑Channel MOSFET, 60 V, 20 A, 10 mOhm, S3O8 Package

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The BSZ100N06LS3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power management. It features a drain-source voltage rating of 60V and a continuous drain current capability of 20A. The component exhibits a typical on-state resistance of 10 mOhm. It is supplied in a S3O8 package, suitable for surface mount assembly.

Key Features

N-Channel Enhancement Mode
60V Drain-Source Voltage
20A Continuous Drain Current
Low On-State Resistance (10 mOhm typical)

Applications

This MOSFET is commonly utilized in various power control and switching circuits. Its characteristics make it suitable for deployment in systems needing efficient and reliable power handling.

DC-DC Converters
Motor Control Circuits
Load Switching