IPP50R190CE – INFINEON

Part Number:

IPP50R190CE

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

N‑Channel MOSFET, 500 V, 18.5 A, 190 mOhm, TO‑220 Package

Datasheet:

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Product Details:

Overview

The IPP50R190CE is a single N-Channel Power MOSFET manufactured by Infineon Technologies. This component is designed for high-voltage switching applications, offering a drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 18.5A. The device features a typical on-state resistance (Rds(on)) of 190 mOhm. It is housed in a standard TO-220 package, facilitating easy mounting and thermal management.

Key Features

500V Drain-Source Voltage (Vds)
18.5A Continuous Drain Current (Id)
190 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode

Applications

This power MOSFET is commonly used in various power electronics systems requiring efficient switching and voltage regulation. Its characteristics make it suitable for deployment in a range of industrial and consumer applications.

Switch-Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
Uninterruptible Power Supplies (UPS)