BSZ520N15NS3 G – INFINEON

Part Number:

BSZ520N15NS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

N‑Channel MOSFET, 150 V, 21 A, 52 mOhm, TSDSON Package

Datasheet:

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Product Details:

Overview

The BSZ520N15NS3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring moderate voltage and current handling capabilities. Key specifications include a drain-source voltage (Vds) of 150V, a continuous drain current (Id) of 21A, and a typical on-state resistance (Rds(on)) of 52 mOhm. The component is supplied in a TSDSON (Thin Small Dual Outline No Leads) package, suitable for surface mount assembly.

Key Features

N-Channel Enhancement Mode
Vds: 150V
Id: 21A
Rds(on): 52 mOhm (typical)

Applications

This MOSFET is commonly utilized in various power management and control systems. Its characteristics make it suitable for implementation in circuits needing efficient switching and load regulation. It is particularly useful in designs where space is a constraint due to the compact TSDSON package.

DC-DC converters
Motor control circuits
Load switching