PJMF280N60E1_T0_00001 – PANJIT

Part Number:

PJMF280N60E1_T0_00001

Manufacturer:

PANJIT

Date Code:

RoHS:

RoHS Compliant

MSL:

Not Applicable

COO:

CHINA

Description:

N-Channel MOSFET, 600 V, 13.8 A, 280 mOhm, ITO-220AB-F Package

Datasheet:

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Product Details:

Overview

The PJMF280N60E1_T0_00001 is a discrete N-Channel enhancement mode MOSFET manufactured by PANJIT. This transistor features a drain-source voltage rating of 600V and a continuous drain current of 13.8A. It exhibits a typical on-state resistance of 280 mOhm. The device is supplied in an isolated TO-220AB-F package for efficient thermal dissipation.

Key Features

600V Drain-Source Voltage (Vds)
13.8A Continuous Drain Current (Id)
280 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode
Isolated TO-220AB-F Package

Applications

This N-Channel MOSFET is suitable for various power switching applications requiring high voltage and moderate current handling capabilities. Its design allows for efficient operation in demanding environments.

Switch-Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
High-Voltage DC-DC Converters