TSM250NB06DCR – TAIWAN SEMICONDUCTOR

Part Number:

TSM250NB06DCR

Manufacturer:

TAIWAN SEMICONDUCTOR

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

TAIWAN

Description:

Dual N-Channel Power MOSFET, 60 V, 30 A

Datasheet:

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Product Details:

Overview

The TSM250NB06DCR is a dual N-Channel Power MOSFET manufactured by TAIWAN SEMICONDUCTOR. This component is designed for power switching applications, offering two independent N-channel MOSFETs within a single package. It features a voltage rating of 60V and a continuous drain current of 30A, making it suitable for moderate power requirements. The device is supplied in a compact package for efficient board mounting.

Key Features

Dual N-Channel configuration
Voltage rating: 60V
Continuous drain current: 30A
Low on-resistance

Applications

This dual N-Channel MOSFET is commonly used in various electronic systems requiring efficient power control. Its configuration allows for multiple switching functions or half-bridge topologies. The component is designed for use in standard operating environments.

DC-DC converters
Motor control circuits
Power management systems