N‑Channel MOSFET, 650 V, 20.7 A, TO247‑3 Package
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The SPW20N60C3FKSA1 is an N-Channel enhancement mode Power MOSFET manufactured by Infineon Technologies. This device is designed for high-voltage, high-speed switching applications. It features a drain-source voltage rating of 650V and a continuous drain current of 20.7A. The component is supplied in a through-hole TO247-3 package.
This MOSFET is suitable for use in power electronics circuits requiring efficient and reliable switching performance. Its high voltage and current capabilities make it appropriate for various industrial and consumer applications.