SSM3J338R – TOSHIBA
Part Number:
SSM3J338R
Manufacturer:
Date Code:
16+
RoHS:
RoHS Compliant
MSL:
1
COO:
THAILAND
Description:
P‑Channel MOSFET, 12 V, 6 A, SOT23F Package
Datasheet:
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Product Details:
Overview
The SSM3J338R is a P-Channel enhancement mode MOSFET manufactured by TOSHIBA. This device is designed for low voltage applications requiring efficient power switching. It features a drain-source voltage rating of 12V and a continuous drain current of 6A. The SSM3J338R is supplied in a compact SOT23F surface-mount package, suitable for high-density circuit board designs.
Key Features
- P-Channel MOSFET configuration
- 12V Drain-Source Voltage (Vds)
- 6A Continuous Drain Current (Id)
- Low On-Resistance (Rds(on))
- SOT23F Surface Mount Package
Applications
This P-Channel MOSFET is commonly utilized in various electronic circuits where efficient load switching and power management are essential. Its compact size and electrical properties make it suitable for a range of applications.
- Load Switching
- Power Management Circuits
- DC-DC Conversion
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