Insulated Gate Bipolar Transistor, 600 V, 151 A, 462 W, SOT‑227 Package
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The APT80GP60JDQ3 is an Insulated Gate Bipolar Transistor (IGBT) manufactured by MICROCHIP TECHNOLOGY. This component is designed for high-power switching applications, offering a collector-emitter voltage of 600V and a continuous collector current of 151A. The device has a power dissipation rating of 462W and is supplied in a SOT-227 package.
This IGBT is suitable for use in various power electronics applications requiring efficient and reliable switching. Its characteristics make it a viable option for systems needing high voltage and current handling capabilities.