STQ1HNK60R-AP – STMicroelectronics

Part Number:

STQ1HNK60R-AP

Manufacturer:

STMicroelectronics

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel MOSFET, 600 V, 1.2 A, SOT-89 Package

Datasheet:

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Product Details:

Overview

The STQ1HNK60R-AP is an N-channel enhancement mode MOSFET manufactured by STMicroelectronics. This power MOSFET is designed for high-voltage switching applications, offering a drain-source voltage rating of 600V and a continuous drain current of 1.2A. It is supplied in a compact SOT-89 surface-mount package.

Key Features

600V Drain-Source Voltage (Vds)
1.2A Continuous Drain Current (Id)
N-Channel Enhancement Mode
SOT-89 Package

Applications

This MOSFET is suitable for various power electronics circuits requiring efficient high-voltage switching. Its compact size makes it ideal for applications where board space is limited. It provides reliable performance in demanding environments.

Power Supplies
LED Lighting
DC-DC Converters