K6X1008C2D-TF55 – SAMSUNG

Part Number:

K6X1008C2D-TF55

Manufacturer:

SAMSUNG

Date Code:

RoHS:

Non-RoHS

MSL:

COO:

Description:

1 Mbit Asynchronous SRAM, 128K x 8, 5 V, 32-Pin

Datasheet:

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Product Details:

Overview

The SAMSUNG K6X1008C2D-TF55 is a 1 Mbit Static Random Access Memory (SRAM) device organized as 128K words by 8 bits. This asynchronous SRAM operates at 5V and is supplied in a 32-pin package. It provides fast access times for read and write operations, making it suitable for various memory applications.

Key Features

1 Mbit memory density
128K x 8 organization
5V operating voltage
Asynchronous operation
32-Pin package

Applications

This SRAM component is commonly employed in systems requiring rapid data storage and retrieval. Its speed and voltage characteristics make it appropriate for integration into a range of electronic devices and embedded systems.

Microcontroller memory
Data buffering
Cache memory