MOSFET, 2A, 500V, 3.6Ω Rds(on)
Stock Quantity: 969
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 3.29 |
| 10+ | |
| 50+ | |
| 100+ |
969 in stock
The MTD2N50E is a Power MOSFET manufactured by MOTOROLA. This N-channel enhancement mode device is designed for high voltage, high speed power switching applications. It features a drain-source voltage rating of 500V and a continuous drain current of 2A. The on-state drain-source resistance (Rds(on)) is typically 3.6Ω. It is supplied in a TO-252 package.
This MOSFET is commonly used in power supplies and motor control circuits where efficient high-voltage switching is required. Its characteristics make it suitable for a range of industrial and consumer electronics applications.