256Kx4 High‑Speed CMOS Static RAM, 5.0V Operating
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The K6R1008C1D-JC10 is a high-speed CMOS Static Random Access Memory (SRAM) manufactured by SAMSUNG. This device features a memory organization of 256K x 4 bits and operates at 5.0V. It is designed for applications requiring rapid data access and storage. The component is supplied in a standard package suitable for various mounting techniques.
This SRAM device is commonly used in systems where fast memory access is crucial. Its characteristics make it suitable for a range of applications requiring temporary data storage and retrieval.