RF Bipolar Transistor, 0.03 A, 6‑Element, Ultra High Frequency, NPN, MS‑012AB
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The HFA3102B is an NPN bipolar junction transistor manufactured by HARRIS. This ultra-high frequency transistor is designed for RF applications and features a collector current of 0.03 A. It is supplied in a 6-element MS-012AB package.
The HFA3102B transistor is typically utilized in high-frequency circuits requiring amplification or switching. Its characteristics make it suitable for various RF and communication systems.