BC847C – PHILIPS/NXP
BJT NPN Transistor 45V, 100mA, 100MHz, 250mW, TO-236AB, Surface Mount
Stock Quantity: 6721
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.09 |
| 10+ | |
| 50+ | |
| 100+ |
6721 in stock
Contact us for volume pricing
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- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
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Overview
The Nexperia BC847C is a high-gain NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Its critical operational characteristic is the high DC current gain (hFE) of up to 420 at 2mA, enabling sensitive signal amplification. A key design consideration when utilizing this SOT-23-3 packaged device is managing its 250mW power dissipation; exceeding this limit, especially in high-ambient temperature environments, can lead to thermal runaway and premature device failure, necessitating careful thermal design and component placement.
Key Features
- NPN Silicon Bipolar Junction Transistor
- Collector-Emitter Voltage (VCEO): 45V
- Maximum DC Collector Current (IC): 100mA
- DC Current Gain (hFE): 420 (min) at 2mA, 5V
- Collector-Emitter Saturation Voltage (VCE(sat)): 200mV (max)
- SOT-23-3 Surface Mount Package (3mm x 1.4mm x 1mm)
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-noise audio preamplification circuits
- General-purpose signal switching in control systems
- Driver stages for small indicator LEDs
- Bias networks in analog signal processing chains
