BC449 – TBC
1994dc HIGH VOLTAGE TRANSISTOR
Stock Quantity: 3570
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 3.33 |
| 10+ | |
| 50+ | |
| 100+ |
3570 in stock
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
- Worldwide shipping available, contact us for a quotation
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- Any import duties or taxes are the responsibility of the receiver
Overview
The onsemi BC449 is a general-purpose NPN bipolar junction transistor (BJT) designed for linear amplification and switching applications. Its key operational characteristic is a 100V collector-emitter breakdown voltage, enabling it to handle moderate voltage swings. A critical design consideration when utilizing the BC449 is its relatively low transition frequency of 200MHz; designers must account for potential signal attenuation or phase shift in high-frequency circuits, often necessitating careful impedance matching or the use of complementary PNP transistors for balanced push-pull stages.
Key Features
- Collector-Emitter Breakdown Voltage (Vceo): 100 V
- Continuous Collector Current (Ic): 300 mA
- Maximum Power Dissipation: 625 mW
- Transition Frequency (fT): 200 MHz
- DC Current Gain (hFE) Min: 50 @ 2mA, 5V
- Package: TO-92 (TO-226-3)
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-frequency audio amplification stages
- General-purpose switching for relay drivers
- Voltage regulation circuits with moderate load currents
- Signal coupling in non-critical audio paths
