P‑Channel MOSFET, 60 V, 75 mOhm, 30 A, TO‑252‑3 Package
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The SPD30P06P G is a P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This device is designed for power switching applications requiring efficient negative polarity control. It features a drain-source voltage rating of 60V and a typical on-state resistance of 75 mOhm. The component is capable of handling a continuous drain current of up to 30A and is supplied in a TO-252-3 package for surface mount assembly.
This P-Channel MOSFET is suitable for a variety of power management and load switching tasks. Its characteristics make it appropriate for use in circuits requiring efficient high-side switching and reverse polarity protection.