SPD30P06P G – INFINEON

Electronic Components
 
Part Number:
SPD30P06P G
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
AUSTRIA
 
 
Description:

P‑Channel MOSFET, 60 V, 75 mOhm, 30 A, TO‑252‑3 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The SPD30P06P G is a P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This device is designed for power switching applications requiring efficient negative polarity control. It features a drain-source voltage rating of 60V and a typical on-state resistance of 75 mOhm. The component is capable of handling a continuous drain current of up to 30A and is supplied in a TO-252-3 package for surface mount assembly.

Key Features

  • P-Channel Enhancement Mode
  • VDS = -60V
  • RDS(on) = 75 mOhm (typical)
  • ID = -30A
  • TO-252-3 Package

Applications

This P-Channel MOSFET is suitable for a variety of power management and load switching tasks. Its characteristics make it appropriate for use in circuits requiring efficient high-side switching and reverse polarity protection.

  • DC-DC Converters
  • Motor Control Circuits
  • Power Distribution Systems
 
 
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