MT29F4G08ABADAWP:D TR – MICRON

The MT29F4G08ABADAWP:D TR is a 4-Gigabit (512MB) NAND Flash memory device fabricated by Micron Technology, utilizing a parallel interface for data access. It is organized as 512 blocks, each containing 64 pages, with each page consisting of 2048 bytes of data and 64 bytes of spare area for ECC and wear-leveling management. The device operates with a supply voltage of 2.7V to 3.6V and supports standard NAND Flash commands including read, program, and erase operations. The parallel I/O interface allows for high-speed data transfer, and the device is housed in a 48-pin TSOP I package suitable for surface mounting. The “TR” suffix indicates tape and reel packaging for automated assembly processes. This component is typically employed in embedded systems, solid-state storage, and data logging applications requiring non-volatile memory.