P-Channel Rad-Hard MOSFET: -30V to -200V, DLA Qualified, Infineon, for Space Applications.
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The IRHNJ597230 is a P-Channel, radiation-hardened MOSFET manufactured by International Rectifier (Infineon). This device is DLA qualified and designed for space applications. It operates with drain-source voltages ranging from -30V to -200V, providing reliable performance in harsh radiation environments.
This radiation-hardened MOSFET is suited for deployment in systems requiring resilience against radiation exposure. Its P-Channel configuration makes it useful in various power management and switching circuits within these environments.