N‑Channel MOSFET, 250 V, 46 A, 46 mΩ, TO220-3 Package
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The IRFB4229PBF is an N-Channel MOSFET manufactured by Infineon. This power MOSFET is designed for switching applications requiring efficient power control. It features a drain-source voltage rating of 250V and a continuous drain current of 46A. The device exhibits a typical on-state resistance of 46 mΩ and is supplied in a TO220-3 package.
This N-Channel MOSFET is commonly used in power management circuits and switching regulators. Its characteristics make it suitable for a range of applications where efficient and controlled power delivery is needed.