IRF640A – FSC
Part Number:
IRF640A
Manufacturer:
Date Code:
200
RoHS:
Non-RoHS
MSL:
1
COO:
UNITED STATES OF AMERICA
Description:
200 V, 18 A, 0.18 Ohm, N‑Channel MOSFET
Datasheet:
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Stock Quantity: 462
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.97 |
| 10+ | |
| 50+ | |
| 100+ |
462 in stock
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Product Details:
Overview
The IRF640A is a discrete N-Channel MOSFET manufactured by FSC. This power MOSFET is designed for high-speed switching applications and features a drain-source voltage rating of 200V. It offers a continuous drain current of 18A and a typical on-state resistance of 0.18 Ohm. The component is supplied in a through-hole package.
Key Features
- N-Channel Enhancement Mode
- 200V Drain-Source Voltage (Vds)
- 18A Continuous Drain Current (Id)
- 0.18 Ohm On-State Resistance (Rds(on))
Applications
This MOSFET is suitable for various power management and switching circuits. Its characteristics make it appropriate for use in systems requiring efficient power control and amplification.
- DC-DC Converters
- Motor Control
- Power Amplifiers
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