IRF3205ZLPBF – INFINEON

Part Number:

IRF3205ZLPBF

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

55 V, 6.5 mOhm, 110 nC, N-Channel HEXFET Power MOSFET, TO-262

Datasheet:

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Product Details:

Overview

The IRF3205ZLPBF is an N-Channel HEXFET Power MOSFET manufactured by Infineon. This component is designed for power switching applications requiring efficient performance. It features a drain-source voltage rating of 55V, a typical on-state resistance of 6.5 mOhms, and a gate charge of 110 nC. The IRF3205ZLPBF is supplied in a TO-262 package for through-hole mounting.

Key Features

55V Drain-Source Voltage (Vds)
6.5 mOhm On-State Resistance (Rds(on))
110 nC Gate Charge (Qg)
N-Channel MOSFET Configuration
TO-262 Package Type

Applications

This power MOSFET is suitable for various applications that demand efficient power control and switching. Its low on-state resistance minimizes power losses, making it ideal for high-current circuits and systems.

DC-DC Converters
Motor Control
Uninterruptible Power Supplies (UPS)