IPW60R080P7 – INFINEON

Electronic Components
 
Part Number:
IPW60R080P7
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
AUSTRIA
 
 
Description:

N‑Channel MOSFET, 600 V, 37 A, 80 mOhm, TO‑247 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPW60R080P7 is a discrete N-Channel MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring a voltage rating of 600V and a continuous drain current of 37A. It features a typical on-state resistance of 80 mOhms. The component is packaged in a TO-247 through-hole mounting configuration.

Key Features

  • 600V Drain-Source Voltage
  • 37A Continuous Drain Current
  • 80 mOhm On-State Resistance (RDS(on))
  • N-Channel Enhancement Mode
  • TO-247 Package Type

Applications

This MOSFET is commonly utilized in power electronics circuits for efficient switching and power conversion. Its characteristics make it suitable for various high-voltage, high-current applications.

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • Motor Control
  • Uninterruptible Power Supplies (UPS)
 
 
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