N‑Channel MOSFET, 600 V, 48 A, 60 mOhm, TO‑247 Package
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The IPW60R060P7 is a discrete N-Channel MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-voltage switching applications, offering a drain-source voltage rating of 600V and a continuous drain current of 48A. Its low on-state resistance (Rds(on)) of 60 mOhm contributes to efficient power conversion. The component is housed in a TO-247 package, facilitating effective heat dissipation.
This MOSFET is suitable for various power electronics applications requiring efficient and reliable switching performance. Its high voltage and current capabilities make it applicable in several industrial and consumer products.