600 V, 24 A N‑Channel MOSFET, 89 mOhm, HSOF‑8 Package
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The IPT60R105CFD7 is a 600V N-Channel MOSFET manufactured by Infineon. This power MOSFET is designed for switching applications requiring efficient power conversion. It features a drain-source on-state resistance (Rds(on)) of 89 mOhm and a continuous drain current of 24A. The component is supplied in a HSOF-8 package.
This MOSFET is commonly used in various power electronics applications where efficient switching and low conduction losses are essential. Its voltage and current ratings make it suitable for medium to high power designs.