IPT60R105CFD7 – INFINEON

Electronic Components
 
Part Number:
IPT60R105CFD7
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
MALAYSIA
 
 
Description:

600 V, 24 A N‑Channel MOSFET, 89 mOhm, HSOF‑8 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPT60R105CFD7 is a 600V N-Channel MOSFET manufactured by Infineon. This power MOSFET is designed for switching applications requiring efficient power conversion. It features a drain-source on-state resistance (Rds(on)) of 89 mOhm and a continuous drain current of 24A. The component is supplied in a HSOF-8 package.

Key Features

  • 600V Drain-Source Voltage (Vds)
  • 24A Continuous Drain Current (Id)
  • 89 mOhm On-State Resistance (Rds(on))
  • N-Channel Enhancement Mode

Applications

This MOSFET is commonly used in various power electronics applications where efficient switching and low conduction losses are essential. Its voltage and current ratings make it suitable for medium to high power designs.

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • DC-DC converters
 
 
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