IPT60R022S7 – INFINEON

Part Number:

IPT60R022S7

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

600 V, 23 A N‑Channel MOSFET, 20 mOhm at 12 V

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The IPT60R022S7 is a 600V N-Channel MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power conversion. It features a low on-resistance of 20 mOhms when driven with a 12V gate voltage, enabling reduced conduction losses. The component is capable of handling a continuous drain current of 23A.

Key Features

600V Drain-Source Voltage
23A Continuous Drain Current
20 mOhm On-Resistance (VGS=12V)
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for use in power supplies, motor control circuits, and other high-voltage switching applications. Its low on-resistance makes it suitable for designs where energy efficiency is a primary concern. The device’s characteristics make it applicable in a range of industrial and consumer electronics.

Switch Mode Power Supplies (SMPS)
Motor Drives
Uninterruptible Power Supplies (UPS)