IPT022N10NF2S – INFINEON

Part Number:

IPT022N10NF2S

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

N-Channel MOSFET, 100 V, 236 A, 2.2 mOhm, TOLL (HSOF-8) Package

Datasheet:

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Product Details:

Overview

The IPT022N10NF2S is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-efficiency switching applications. It features a drain-source voltage rating of 100V and a continuous drain current capability of 236A. The device exhibits a low drain-source on-state resistance of 2.2 mOhm. It is supplied in a TOLL (HSOF-8) package, optimized for thermal performance and compact board mounting.

Key Features

N-Channel Enhancement Mode
V_DS: 100V
I_D: 236A
R_DS(on): 2.2 mΩ

Applications

This MOSFET is commonly used in various power management and motor control systems. Its low on-resistance and high current capacity make it suitable for designs requiring efficient power conversion and switching.

Synchronous Rectification
DC-DC Converters
Motor Drives