IPT007N06N – INFINEON

Part Number:

IPT007N06N

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

N‑Channel, 60 V, 300 A MOSFET, 0.75 mOhm, HSOF‑8 Package

Datasheet:

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Product Details:

Overview

The IPT007N06N is a discrete N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-current switching applications, offering a drain-source voltage rating of 60V and a continuous drain current capability of 300A. It exhibits a low on-state resistance of 0.75 mOhm and is encapsulated in a HSOF-8 package.

Key Features

N-Channel Enhancement Mode
60V Drain-Source Voltage
300A Continuous Drain Current
Low On-State Resistance (0.75 mOhm)

Applications

This MOSFET is suitable for various power management and switching circuits that require efficient and reliable performance. Its high current capacity and low resistance make it ideal for demanding environments.

Synchronous Rectification
DC-DC Converters
Motor Control Circuits