IPP075N15N3 G – INFINEON

Electronic Components
 
Part Number:
IPP075N15N3 G
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
MALAYSIA
 
 
Description:

N-Channel MOSFET, 150 V, 100 A, 8 mOhm, TO‑220‑3 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPP075N15N3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power MOSFET is designed for switching applications requiring efficient power management. It features a drain-source voltage rating of 150V and a continuous drain current of 100A. The device exhibits a low on-state resistance of 8 mOhm. It is supplied in a TO‑220‑3 package, facilitating ease of mounting and thermal management.

Key Features

  • N-Channel Enhancement Mode
  • VDS: 150V
  • ID: 100A
  • RDS(on): 8 mOhm

Applications

This MOSFET is suitable for various power control and conversion circuits. Its characteristics make it useful in systems needing efficient switching and low power dissipation.

  • Synchronous Rectification
  • DC-DC Converters
  • Motor Control
 
 
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