IPP037N06L3 G – INFINEON

Part Number:

IPP037N06L3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N‑Channel MOSFET, 60 V, 90 A, OPTIMOS 3, PG‑TO220‑3 Package

Datasheet:

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Product Details:

Overview

The IPP037N06L3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring efficient power management. It features a drain-source voltage (Vds) rating of 60V and a continuous drain current (Id) of 90A. The component is housed in a PG-TO220-3 package, suitable for through-hole mounting.

Key Features

N-Channel enhancement mode
Vds: 60V
Id: 90A
RDS(on): 3.7 mΩ (typical)
PG-TO220-3 package

Applications

This MOSFET is commonly used in various power electronic circuits. Its characteristics make it suitable for use in systems needing efficient switching and power control.

Synchronous rectification
DC-DC converters
Motor control