IPN70R600P7S – INFINEON

Part Number:

IPN70R600P7S

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

700 V, 8.5 A N‑Channel MOSFET, 600 mOhm, SOT223 Package

Datasheet:

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Product Details:

Overview

The IPN70R600P7S is a 700V N-Channel MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring a drain-source breakdown voltage of 700 volts and a continuous drain current of 8.5 Amperes. It features a typical on-state resistance of 600 milliohms and is available in a SOT223 surface-mount package.

Key Features

700V Drain-Source Breakdown Voltage
8.5A Continuous Drain Current
600 mOhm On-State Resistance (RDS(on))
N-Channel Enhancement Mode
SOT223 Package

Applications

This MOSFET is suitable for various power electronics applications where efficient switching and voltage handling are essential. Its characteristics make it appropriate for use in circuits needing controlled power delivery and high voltage endurance.

Power Supplies
LED Lighting
DC-DC Converters