IPDQ60R010S7 – INFINEON

Part Number:

IPDQ60R010S7

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel MOSFET, 600 V, 50 A, 9 mOhm at 12 V

Datasheet:

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Product Details:

Overview

The IPDQ60R010S7 is an N-Channel power MOSFET manufactured by Infineon. This component is designed for high-voltage switching applications, offering a drain-source voltage rating of 600V and a continuous drain current of 50A. Its low on-state resistance, specified at 9 mOhm with a gate-source voltage of 12V, minimizes conduction losses. The device is supplied in a standard through-hole package.

Key Features

600V Drain-Source Voltage (Vds)
50A Continuous Drain Current (Id)
9 mOhm On-State Resistance (Rds(on) @ Vgs=12V)
N-Channel Enhancement Mode

Applications

This MOSFET is typically employed in power electronic circuits requiring efficient high-voltage switching. Its characteristics make it suitable for various industrial and commercial applications where power management is critical.

Switch-Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
Motor control