IPD082N10N3 G – INFINEON

Part Number:

IPD082N10N3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

100 V, 80 A N‑Channel MOSFET, 7 mOhm, TO‑252‑3 Package

Datasheet:

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Product Details:

Overview

The IPD082N10N3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power conversion. It features a drain-source voltage rating of 100V and a continuous drain current capability of 80A. The component is housed in a TO-252-3 package, suitable for surface mount assembly.

Key Features

100V Drain-Source Voltage (Vds)
80A Continuous Drain Current (Id)
7 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode

Applications

This MOSFET is commonly used in various power management systems and switching circuits. Its low on-resistance and high current capability make it suitable for applications demanding minimal power loss and efficient operation.

Synchronous Rectification
DC-DC Converters
Motor Control