IPD068N10N3 G – INFINEON

Part Number:

IPD068N10N3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N-Channel MOSFET, 100 V, 90 A, 6.8 mOhm, TO-252-3 Package

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The IPD068N10N3 G is an N-Channel MOSFET manufactured by Infineon Technologies. This power MOSFET is designed for switching and amplification applications, offering a drain-source voltage of 100V and a continuous drain current of 90A. It features a low on-state resistance of 6.8 mOhm and is packaged in a TO-252-3 housing for efficient thermal dissipation.

Key Features

N-Channel Enhancement Mode
V_DS: 100V
I_D: 90A
R_DS(on): 6.8 mOhm

Applications

This MOSFET is commonly used in various power management and control circuits. Its characteristics make it suitable for deployment in systems requiring efficient power handling and low losses.

Synchronous Rectification
DC-DC Conversion
Motor Control